Naina Semiconductor Ltd.
MUR10040CT thru MUR10060CTR
Features
Super Fast Recovery Diode, 100A
• Dual Diode Construct...
Naina Semiconductor Ltd.
MUR10040CT thru MUR10060CTR
Features
Super Fast Recovery Diode, 100A
Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
RMS reverse voltage
VRMS
DC blocking voltage
VDC
Average forward current
IF(AV)
Non-repetitive forward surge current, half sinewave
IFSM
Conditions
TC ≤ 140 oC TC = 25 oC
MUR10040CT(R) 400 280 400 100
400
MUR10060CT(R) 600 420 600 100
400
Units V V V A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions
DC forward voltage
VF
IF = 50 A TJ = 25 oC
DC reverse current
VR = 50 V
IR
TJ = 25 oC VR = 50 V
TJ = 125oC
Maximum Reverse Recovery Time
IF = 0.5A trr IR = 1.0A
IRR = 0.25A
MUR10040CT(R) 1.3 25 1
90
MUR10060CT(R) 1.3 25 1
110
Units V µA mA
nS
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Thermal resistance junction to case
RthJ-C
Operating, storage temperature range
TJ , Tstg
MUR10040CT(R) MUR10060CT(R) Units
1.0 1.0 oC/W
- 40 to +175
- 40 to +175
oC
1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653
[email protected] www.nainasemi.com
Naina Semiconductor Ltd.
Package Outline
MUR10040CT thru MUR10060CTR
ALL DIMENSIONS IN MM
Ordering Table
MUR 1
100 2
40 3
CT 4
1 ...