PWB80A40

Naina Semiconductor Ltd. PWB80A Non-isolated Thyristor Module, 80A Features Low voltage three-phase High surge current capability Easy construction Non-isolated Mounting base as common anode Voltage Ratings (TC = 25OC unless otherwise specified) Parameter Symbol PWB80A30 PWB80A40 Maximum repetitive peak reverse voltage VRRM 300 400 Maximum non-repetitive peak reverse voltage VRSM 360 480 Maximum repetitive peak off-state voltage VDRM 300 400 Units V V V Electrical Characteristics (TC = 25OC unless otherwise specified) Parameter Conditions Average on-state current R.M.S. on-state current Single phase, half-wave, 1800 conduction @ TC = 1160C On-state surge current half cycle, 50Hz/60Hz, peak value, non-repetitive I2t required for fusing Peak gate power dissipation Average gate power dissipation Peak gate current Peak gate voltage (forward) Peak gate voltage (reverse) Critical rate of rise of on-state current Critical rate of rise of off-state voltage Holding current Peak on-state voltage Repetitive Peak Reverse Current Gate Trigger Current Gate Trigger Voltage IG = 200mA, VD = ½ VDRM , dIG/dt = 1 A/µs, TJ=250C TJ = 1500C, VD = 2/3 VDRM , exponential wave TJ=250C TJ=250C TJ=1500C, single phase, half wave TJ = 25OC, IT = 1A, VD=6V TJ = 25OC, IT = 1A, VD=6V Symbol IT(AV) IT(RMS) ITSM I2t PGM PGM(AV) IGM VFGM VRGM di/dt dv/dt IH VTM IRRM IGT VGT Values 80 125 2500 31250 10 1 3 10 5 50 50 100 1.20 12 150 2 Units A A A A2S W W A V V A/µs ...