NPS35

Naina Semiconductor Ltd. Press Fit SCR ½”, 35 Amps Features Improved glass passivation for high reliability Exceptional stability at high temperatures Metric thread type available Low thermal resistance NPS35 TO-203/F Electrical Characteristics (TA = 250C unless otherwise specified) Parameter Symbol 50 100 Maximum repetitive peak reverse voltage, VRRM 200 400 600 RMS on-state current IT(RMS) Non-repetitive peak surge on-state current, one cycle Peak gate trigger current ITSM IGTM Peak gate power dissipation @ IGT ≤ IGTM Average gate power dissipation PGM PG(AV) Peak off-state current Maximum instantaneous forward voltage drop DC holding current IDRM & IRRM VTM IH Critical rate-of-rise of off-state voltage dv/dt DC gate trigger current DC gate trigger voltage Gate controlled turn-on time IGT VGT Tgt Part Numbers NPS350 NPS351 NPS352 NPS354 NPS356 35 350 2 20 0.5 1.0 1.6 50 200 25 2.0 2.5 Units V A A A W W mA V mA V/µsec mA V µsec Thermal and Mechanical Specifications (TA = 25oC, unless otherwise noted) Parameters Symbol Maximum operating junction temperature range TJ Maximum storage temperature range TStg Maximum thermal resistance, junction to case Rθ(J-C) Approximate weight W Values - 40 to +110 - 40 to +150 0.9 15 Units oC oC oC/W g 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com Naina Semiconductor Ltd. Package Outline (All dimensions in mm) NPS35 Order...