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25NT

Naina Semiconductor

Phase Control Thyristors

Naina Semiconductor Ltd. 25NT Phase Control Thyristors (Stud Type), 25A Features • Improved glass passivation for high...


Naina Semiconductor

25NT

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Naina Semiconductor Ltd. 25NT Phase Control Thyristors (Stud Type), 25A Features Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Metric thread type available Low thermal resistance TO-208AA (TO-48) Voltage Ratings (TJ = 25oC, unless otherwise noted) Type number Voltage Code VDRM/VRRM, Maximum repetitive peak and off-state voltage (V) 20 200 40 400 60 600 25NT 80 800 100 1000 120 1200 160 1600 VRSM, Maximum nonrepetitive peak voltage (V) 300 500 700 900 1100 1300 1700 IDRM/IRRM, Maximum at TJ=TJ Maximum (mA) 8.0 Electrical Ratings (TJ = 25oC, unless otherwise noted) Parameters Maximum on-state average current TJ = 85oC Maximum RMS on-state current Maximum peak, one cycle non-repetitive surge current Maximum I2t for fusing Maximum peak on-state voltage Maximum holding current Maximum latching current TJ = 25oC, 10 ms TJ = 130oC, 10 ms TJ = 25oC, 10 ms TJ = 130oC, 10 ms TJ = 25oC TJ = 25oC TJ = 25oC Maximum rate of rise of turn-on current TJ = TJ max. Maximum critical rate of rise of off-state voltage Maximum gate current required to trigger Maximum gate voltage required to trigger TJ = TJ max. TJ = 25oC TJ = 25oC Symbol IT(AV) IT(RMS) ITSM I2t VTM IH IL di/dt dv/dt IGT VGT Values 25 40 450 380 1000 720 1.9 150 400 150 500 100 3 Units A A A A2s V mA mA A/µs V/µs mA V Thermal and Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Symbol Ma...




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