Naina Semiconductor Ltd.
10SQ030 thru 10SQ100
Schottky Barrier Rectifier, 10.0 A
Features • Diffused junction • Low c...
Naina Semiconductor Ltd.
10SQ030 thru 10SQ100
Schottky Barrier Rectifier, 10.0 A
Features Diffused junction Low cost Low reverse leakage current High surge current capability & low forward voltage drop Polarity: Color Band denotes Cathode High efficiency
Mechanical Data Case: JEDEC R-6 molded plastic Polarity: Color band denotes cathode
Weight: 2.1 grams Mounting position: Any
Thermal Specifications (TC = 25oC unless otherwise specified)
Parameters
Symbol Values
Maximum operating junction temperature range TJ -55 to +150
Maximum storage temperature range
TSTG -55 to +150
Typical thermal resistance junction to case
RθJC 3.0
Units oC oC
oC/W
JEDEC R-6
Electrical Characteristics (TC = 25oC unless otherwise specified)
Parameter
Symbol 12SQ030 12SQ035 12SQ040
Maximum repetitive peak reverse voltage
VRRM
30
35
40
Maximum RMS voltage
VRMS
21
24.5
28
Maximum DC blocking voltage
VDC 30
35
40
Maximum average forward output current @ TC = 950C
Peak forward surge current (8.3ms) single half sine-wave superimposed on rated load
IF(AV) IFSM
Forward voltage drop @ 10A DC (Note 1)
VF
0.55
Typical junction capacitance (Note 2)
CJ
Maximum DC reverse current at rated DC blocking voltage
TA = 250C TA = 1000C
IR
NOTES: (1) 300 µs, pulse width, 2% duty cycle
(2) Measured at 1.0 MHz and reverse voltage of 4.0 VDC.
12SQ045 12SQ050 12SQ060
45 50 60
31.5 35
42
45 50 60
10
275
0.7 450 0.5 50
12SQ080 12SQ100 80 100 56 70 80 100
0.8
...