12SQ040

Naina Semiconductor Ltd. 10SQ030 thru 10SQ100 Schottky Barrier Rectifier, 10.0 A Features Diffused junction Low cost Low reverse leakage current High surge current capability & low forward voltage drop Polarity: Color Band denotes Cathode High efficiency Mechanical Data Case: JEDEC R-6 molded plastic Polarity: Color band denotes cathode Weight: 2.1 grams Mounting position: Any Thermal Specifications (TC = 25oC unless otherwise specified) Parameters Symbol Values Maximum operating junction temperature range TJ -55 to +150 Maximum storage temperature range TSTG -55 to +150 Typical thermal resistance junction to case RθJC 3.0 Units oC oC oC/W JEDEC R-6 Electrical Characteristics (TC = 25oC unless otherwise specified) Parameter Symbol 12SQ030 12SQ035 12SQ040 Maximum repetitive peak reverse voltage VRRM 30 35 40 Maximum RMS voltage VRMS 21 24.5 28 Maximum DC blocking voltage VDC 30 35 40 Maximum average forward output current @ TC = 950C Peak forward surge current (8.3ms) single half sine-wave superimposed on rated load IF(AV) IFSM Forward voltage drop @ 10A DC (Note 1) VF 0.55 Typical junction capacitance (Note 2) CJ Maximum DC reverse current at rated DC blocking voltage TA = 250C TA = 1000C IR NOTES: (1) 300 µs, pulse width, 2% duty cycle (2) Measured at 1.0 MHz and reverse voltage of 4.0 VDC. 12SQ045 12SQ050 12SQ060 45 50 60 31.5 35 42 45 50 60 10 275 0.7 450 0.5 50 12SQ080 12SQ100 80 100 56 70 80 100 0.8 ...