Naina Semiconductor Ltd.
Silicon Rectifier, 10.0A
Features • Diffused junction • Low cost • Low reverse leakage current ...
Naina Semiconductor Ltd.
Silicon Rectifier, 10.0A
Features Diffused junction Low cost Low reverse leakage current High current capability & low forward voltage drop Plastic material carrying UL recognition 94V-0 Polarity: Color Band denotes Cathode Lead free finish
10A05 - 10A10
Thermal and Mechanical Specifications (TA = 250C unless otherwise specified)
Parameters
Symbol Values Units
Maximum operating junction temperature range
TJ
- 55 to + 125
0C
Maximum storage temperature range
TStg
- 55 to + 150
0C
Typical thermal resistance junction to ambient
RθJA
10 0C/W
Approximate weight
W 2.1 g
JEDEC R-6
Electrical Characteristics (TA = 250C unless otherwise specified)
Parameter
Symbol 10A05 10A1
Maximum repetitive peak reverse voltage
VRRM
50 100
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output current @ TA = 500C Peak forward surge current (8.3ms) single half sine-wave superimposed on rated load
VRMS VDC IF(AV)
IFSM
35 70 50 100
Maximum DC forward voltage drop per element @ 10 A
VF
Typical junction capacitance
CJ
Maximum DC reverse current at rated DC blocking voltage
TA = 250C TA = 1000C
IR
10A2
200
140 200
10A4 400 280 400 10
600
1.0 150 10 100
10A6
600
420 600
10A8
800
560 800
10A10
1000
700 1000
Units V V V A
A
V pF
µA
1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653
[email protected] www.nainasemi.com
Naina Semiconductor Ltd.
10A05 - 10A10
Dimensions in...