Naina Semiconductor Ltd.
Silicon Rectifier, 6.0A
Features • Diffused junction • Low cost • Low reverse leakage current • High current capability & low forward voltage drop • Plastic material carrying UL recognition 94V-0 • Polarity: Color Band denotes Cathode • Lead free finish
6A05 - 6A10
Thermal and Mechanical Specifications (TA = 250C unless otherwise specified)
Parameters
Symbol Values Units
Maximum operating junction temperature range
TJ
-55 to +150
0C
Maximum storage temperature range TStg
-55 to +150
0C
Typical thermal resistance junction to ambient
RθJA
10 0C/W
Approximate weight
W 2.1 g
JEDEC R-6
Electrical Characteristics (TA = 250C unless otherwise specified)
Parameter
Symbol 6A05 6A1 6A2 6A4 6A6 6A8 6A10
Maximum repetitive peak reverse voltage
VRRM 50 100 200 400 600 800 1000
Maximum RMS voltage
VRMS 35 70 140 280 420 560 700
Maximum DC blocking voltage
VDC 50 100 200 400 600 800 1000
Maximum average forward output current @ TA = 500C
IF(AV)
6.0
Peak forward surge current (8.3ms)
single half sine-wave superimposed on rated load
IFSM
400
Maximum DC forward voltage drop per element @ 10 A
VF
0.9
Typical junction capacitance
CJ
150
Maximum DC reverse current at rated DC blocking voltage
TA = 250C TA = 1000C
IR
10 100
Units V V V A
A
V pF µA
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
Naina Semiconductor Ltd.
6A05 - 6A10
Dimensions in inches and (millimeters)
2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
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