FYPF1010DN
FYPF1010DN
Features
• Low forward voltage drop • High frequency properties and switching speed • Guard ring ...
FYPF1010DN
FYPF1010DN
Features
Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection
Applications
Switched mode power supply Freewheeling diodes
1 2 3
TO-220F
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 125°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 100 100 10 100 -40 to +150 Units V V A A °C
Thermal Characteristics
Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 4.0 Units °C/W
Electrical Characteristics (per diode)
Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 5A IF = 5A IF = 10A IF = 10A Maximum Instantaneous Reverse Current @ rated VR Value TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.75 0.65 0.95 0.73 mA 1 30 Units V
IRM *
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
FYPF1010DN
Typical Characteristics
100
TJ=150 C
o
Forward Current, I F [A]
Reverse Current, I R [mA]
10
10
TJ=125 C
o
1
1
TJ=75 C
0.1
o
TJ=125 C
0.1
o
TJ=75 C TJ=25 C
o
o
0.01
TJ=25 C
0.001
o
0.01 0 1 2 3
0
20
40
60
80
100
Forward Voltage Drop, VF [V]
Reverse Voltag...