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FYPF1010DN

Fairchild Semiconductor

SCHOTTKY BARRIER RECTIFIER

FYPF1010DN FYPF1010DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring ...


Fairchild Semiconductor

FYPF1010DN

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FYPF1010DN FYPF1010DN Features Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection Applications Switched mode power supply Freewheeling diodes 1 2 3 TO-220F 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 125°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 100 100 10 100 -40 to +150 Units V V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 4.0 Units °C/W Electrical Characteristics (per diode) Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 5A IF = 5A IF = 10A IF = 10A Maximum Instantaneous Reverse Current @ rated VR Value TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.75 0.65 0.95 0.73 mA 1 30 Units V IRM * * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2001 Fairchild Semiconductor Corporation Rev. B, November 2001 FYPF1010DN Typical Characteristics 100 TJ=150 C o Forward Current, I F [A] Reverse Current, I R [mA] 10 10 TJ=125 C o 1 1 TJ=75 C 0.1 o TJ=125 C 0.1 o TJ=75 C TJ=25 C o o 0.01 TJ=25 C 0.001 o 0.01 0 1 2 3 0 20 40 60 80 100 Forward Voltage Drop, VF [V] Reverse Voltag...




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