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FYP2045DN

Fairchild Semiconductor

SCHOTTKY BARRIER RECTIFIER

FYP2045DN FYP2045DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring fo...


Fairchild Semiconductor

FYP2045DN

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FYP2045DN FYP2045DN Features Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection Applications Switched mode power supply Freewheeling diodes 1 2 3 TO-220 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 45 45 20 150 -65 to +150 Units V V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 2.2 Units °C/W Electrical Characteristics (per diode) Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A Maximum Instantaneous Reverse Current @ rated VR Value TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.55 0.49 0.70 0.65 mA 1 80 Units V IRM * * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2002 Fairchild Semiconductor Corporation Rev. A, September 2002 FYP2045DN Typical Characteristics 100 100 TJ=150 C o Reverse Current, I R[mA] Forward Current, I F[A] 10 10 TJ=125 C o 1 1 TJ=75 C 0.1 o TJ=125 C 0.1 o TJ=75 C TJ=25 C o o 0.01 TJ=25 C o 0.01 0.0 1E-3 0.5 1.0 1.5 0 10 20 30 40 Forward Voltage Drop, VF[V] Reverse Vo...




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