RLT1550-30G

ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1550-30G TECHNICAL DATA High Power Infrared Laserdiode Structure: GaInAsP/InP SQW structure Lasing wavelength: 1550 nm, single mode Typ. optical power: 30 mW Package: 9 mm (SOT-148) PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode NOTE! LASERDIODE MUST BE COOLED! Absolute Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Maximum LD Current Optical Output Power LD Reverse Voltage PD Reverse Voltage Operating Temperature Storage Temperature If Po VR(LD) VR(PD) TC TSTG RATING 200 33 1.5 6 -20 .. +40 -40 .. +85 UNIT mA mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Lasing Aperture A cw Optical Output Power Threshold Current Po Ith cw cw Operation Current Forward Voltage Lasing Wavelength Beam Divergence Iop Uf λp θ// Po = 30 mW Po = 30 mW Po = 30 mW Po = 30 mW Beam Divergence θ⊥ Po = 30 mW Monitor Current Im Po = 30 mW MIN 30 1520 > 20 TYP 1x5 30 55 160 2 1550 25 40 100 MAX 1580 1000 UNIT µm² mW mA mA V nm ° ° µA ...