FYP1045DN
FYP1045DN
Features
• Low forward voltage drop • High frequency properties and switching speed • Guard ring fo...
FYP1045DN
FYP1045DN
Features
Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection
Applications
Switched mode power supply Freewheeling diodes
1 2 3
TO-220
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 130°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 45 45 10 80 -65 to +150 Units V V A A °C
Thermal Characteristics
Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 3.0 Units °C/W
Electrical Characteristics (per diode)
Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 5A IF = 5A IF = 10A IF = 10A Maximum Instantaneous Reverse Current @ rated VR Value TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.55 0.49 0.70 0.65 mA 1 40 Units V
IRM *
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
FYP1045DN
Typical Characteristics
100
T J=150 C
10
o
Reverse Current, IR[mA]
Forward Current, I F[A]
10
TJ =125 C
1
o
1
T J=75 C
0.1
o
TJ=125 C
0.1
o
TJ=75 C TJ=25 C
o
o
0.01
TJ=25 C
o
1E-3
0.01 0.0
0.5
1.0
1.5
0
10
20
30
40
Forward Voltage Drop, VF[V]
Reverse Voltage, ...