RLT9830MG-N

ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT9830MG-N TECHNICAL DATA High Power Infrared Laserdiode Structure: index guided, single transverse mode Lasing wavelength: 980 nm typ. Output power: 30 mW cw Package: 5.6 mm, TO-18 PIN CONNECTION: NOTE! LASERDIODE MUST BE COOLED! 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Maximum Ratings (Tc = 25°C) CHARACTERISTIC Optical Output Power LD Reverse Voltage PD Reverse Voltage Operation Case Temperature Storage Temperature SYMBOL Po VR(LD) VR(PD) TC TSTG RATING 30 2 30 -10 .. +60 -40 .. +85 UNIT mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Threshold Current Operation Current Operating Voltage Lasing Wavelength Beam Divergence Ith Iop Vop λp θ// cw Po = 30 mW Po = 30 mW Po = 30 mW Po = 30 mW Beam Divergence θ⊥ Po = 30 mW Slope Efficiency η cw Monitor Current Im Po = 30 mW MIN 10 970 7 30 0.5 TYP 15 60 1.5 980 8 33 0.7 0.75 MAX 20 80 1.7 983 12 38 1 1 UNIT mA mA V nm ° ° mW/mA mA ...