RLT9820G

RLT9820G TECHNICAL DATA High Power Infrared Laserdiode Structure: GaAlAs double heterostructure Lasing wavelength: 980 nm typ. Max. optical power: 20 mW, multimode Package: 9 mm PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode NOTE! LASERDIODE MUST BE COOLED! Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power LD Reverse Voltage PD Reverse Voltage Operating Temperature Storage Temperature Po VR(LD) VR(PD) TC TSTG RATING 25 1.5 6 -10 .. +50 -40 .. +85 UNIT mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Threshold Current Operation Current Lasing Aperture Po Ith Iop A cw cw Po = 20 mW Lasing Wavelength Beam Divergence Beam Divergence Differential Efficiency Monitor Current λp θ// θ⊥ dPo/dIop Im Po = 20 mW Po = 20 mW Po = 20 mW Po = 20 mW Po = 20 mW MIN TYP MAX 20 25 30 60 75 100 1x15 970 980 990 20 25 45 50 0.4 0.7 1.0 150 350 1200 UNIT mW mA mA µm² nm ° ° mW/mA µA 10.08.2010 rlt9820g.doc 1 of 1 ...