High Power Infrared Laser Diode
RLT9820G
TECHNICAL DATA
High Power Infrared Laserdiode
Structure: GaAlAs double heterostructure Lasing wavelength: 980 n...
Description
RLT9820G
TECHNICAL DATA
High Power Infrared Laserdiode
Structure: GaAlAs double heterostructure Lasing wavelength: 980 nm typ. Max. optical power: 20 mW, multimode Package: 9 mm
PIN CONNECTION:
1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode
NOTE!
LASERDIODE MUST BE COOLED!
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power LD Reverse Voltage PD Reverse Voltage Operating Temperature Storage Temperature
Po VR(LD) VR(PD)
TC TSTG
RATING 25 1.5 6
-10 .. +50 -40 .. +85
UNIT mW
V V °C °C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Optical Output Power Threshold Current Operation Current Lasing Aperture
Po Ith Iop A
cw cw Po = 20 mW
Lasing Wavelength Beam Divergence Beam Divergence Differential Efficiency Monitor Current
λp θ// θ⊥ dPo/dIop Im
Po = 20 mW Po = 20 mW Po = 20 mW Po = 20 mW Po = 20 mW
MIN TYP MAX 20 25 30
60 75 100 1x15
970 980 990 20 25 45 50
0.4 0.7 1.0 150 350 1200
UNIT mW mA mA µm² nm
° ° mW/mA µA
10.08.2010
rlt9820g.doc
1 of 1
...
Similar Datasheet