HIGH-SPEED SWITCHING USE
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
FY8ABJ-03
OUTLINE DRAWING
Dimensions in mm
6.0 4...
Description
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
FY8ABJ-03
OUTLINE DRAWING
Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN
q 4V DRIVE q VDSS ............................................................................... –30V q rDS (ON) (MAX) ............................................................. 20mΩ q ID ......................................................................................... –8A
SOP-8
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings –30 ±20 –8 –56 –8 –2.1 –8.4 2.0 –55 ~ +150 –55 ~ +150 0.07
Unit V V A A A A A W °C °C g Sep.1998
L = 10µH
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage
(Tch = 25°C)
Test conditions ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V ID = –8A, VGS = –10V ID = –4A, VGS = –4V ID = –8A, VGS = –10V ID = –8A, VDS ...
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