MITSUBISHI RF POWER MOS FET
2SK2973
DESCRIPTION
2SK2973 is a MOS FET type transistor specifically designed for
VHF/UHF ...
MITSUBISHI RF POWER MOS FET
2SK2973
DESCRIPTION
2SK2973 is a MOS FET type
transistor specifically designed for
VHF/UHF power amplifiers applications.
OUTLINE DRAWING
4.6MAX
FEATURES
High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm
High efficiency:55% typ. Source case type SOT-89 package
(connected internally to source)
1.6±0.2 2
13
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
0.53 1.5 MAX
3.0
0.48MAX
1 : DRAIN 2 : SOURCE 3 : GATE
SOT-89
Dimensions in mm 1.5±0.1
0.4 +0.03 -0.05 MARKING
MARKING
TYPE No.
K1
LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
Symbol
Parameter
Conditions
VDSS
Drain to source voltage
VGSS
Gate to source voltage
Pch Channel dissipation
Tc=25˚C
(Note2)
Tj Junction temperature
Tstg Storage temperature
Note1: Above parameters are guaranteed independently. 2: Solder on printed board(Copper leaf area;70×70mm,t=1.6mm Epoxy glass)
Ratings 17 ±10 1.5 150
-40 to +110
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)
Symbol
Parameter
Test conditions
IDSS
VDS=12V, VGS=0V
IGSS
VGS=10V, VDS=0V
VTH Threshold voltage
VDS=7V, IDS=1mA
Ciss VGS=10V, VDS=0V,f=1MHz
Coss
VDS=10V, VGS=0V,f=1MHz
Pout hD
VDS=9.6V, Pin=50mW,f=450MHz
Note: Above parameters,ratings,limits and conditions are subject to change.
Unit V V W ˚C ˚C
Limits Min Typ Max
10 1 1.2 1.8 10 8 1 1.2 45 55
Unit
µA µA V pF pF W %
Nov. ´97
MITSUBISHI RF POWER MOS FET
2S...
