S8410MG

S8410MG TECHNICAL DATA Infrared Laser Diode Features Lasing Mode Structure: multi mode Peak Wavelength : typ. 840 nm Optical Ouput Power: 10 mW Package: 5.6 mm Electrical Connection Pin Configuration PIN Function 1 LD Cathode 2 LD Anode 3 n.c. Bottom View Absolute Maximum Ratings (TC=20°C) Item CW Output Power LD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO Vr TC Tstg Value 10 2 -10 … +60 -15 … +85 Unit mW V °C °C Specifications (TC=20°C) Item Optical Specifications CW Output Power Center Wavelength FWHM Beam Divergence Electrical Specifications Threshold Current Operating Current Slope Efficiency Operating Voltage Symbol PO λC θ║ θ┴ Ith Iop η Uop Min. 830 - 0.7 - Typ. 10 840 10 35 17 28 0.95 1.7 Max. 850 - 23 38 2.1 Unit mW nm deg deg mA mA mW/mA V The above specifications are for reference purpose only and subjected to change without prior notice. 04.10.2011 S8410MG 1 of 5 Package Dimensons 5.6 mm Package (Unit:mm) Typical Performance Curves Optical Ouput Power vs. Forward Current 04.10.2011 S8410MG 2 of 5 Forward Voltage vs. Forward Current Peak Wavelength vs. Case Temperature Far-Field Pattern 04.10.2011 S8410MG 3 of 5 Slope Efficiency vs. Case Temperature Threshold Current vs. Case Temerature 04.10.2011 S8410MG 4 of 5 Safety of Laser light Laser Light can damage the human eyes and skin. Do not expose the eye or skin directly to any laser light and/or through optical lens. When handling the LDs, wear appr...