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RLT83500G

High Power Infrared Laser diode

Description

RLT83500G TECHNICAL DATA High Power Infrared Laser Diode Lasing wavelength: 830 nm typ. Max. optical power: 500 mW, cw Emitting Aperture: 1x50 μm² Package: 9 mm PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode Specification (Tc = 25°C) CHARACTERISTIC Optical Output Power Threshold Current Operation Current...

Roithner

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