2SK2952
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2952
Chopper Regulator Applications
Uni...
2SK2952
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2952
Chopper
Regulator Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) l High forward transfer admittance : |Yfs| = 8.0 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 400 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
Rating
400 400 ±30 8.5 34 40
427
8.5 4.0 150 −55~150
Unit
V V V A A W
mJ
A mJ °C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
3.125 62.5
°C / W °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 9.6 mH, RG = 25 Ω, IAR = 8.5 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This
transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-09-04
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Con...