DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1398
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
5 DESCRIPTION The 2SK1398 is N-channel MOS Field Effect Transistor
designed for a high-speed switching device in digital circuits. The 2SK1398 is driven by a 2.5-V power source, it is
suitable for applications including headphone stereos which need power saving.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1398
SST
FEATURES • Directly driven by ICs having a 3-V power supply. • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. • Can be used complementary with the 2SJ184.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS= 0 V)
VDSS
Gate to Source Voltage (VDS= 0 V)
VGSS
Drain Current (DC) Drain Current (pulse) Note
ID(DC) ID(pulse)
Total Power Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Note PW ≤ 10 ms, Duty cycle ≤ 50 %
50 ±7.0 ±100 ±200 250 1.