RLT808500G

RLT808500G TECHNICAL DATA High Power Infrared Laserdiode Structure: High Efficiency MOVCD Quantum Well Design Lasing wavelength: 808 nm typ. Output power: 500 mW, cw NOTE! Package: 9 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Absolute Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power LD Reverse Voltage PD Reverse Voltage Operating Temperature Storage Temperature Po VR(LD) VR(PD) TC TSTG RATING 550 2 30 -10 .. +40 -40 .. +80 UNIT mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX Optical Output Power Threshold Current Operation Current Operation Voltage Slope Efficiency Po Ith Iop Vop η kink free cw Po = 500 mW Po = 500 mW cw 500 150 180 650 700 750 1.85 2.0 0.8 1.0 1.1 Lasing Wavelength λ Po = 500 mW 805 808 811 Beam Divergence Beam Divergence Lasing Aperture Recommended Operating Temperature θ// θ⊥ A Top Po = 500 mW Po = 500 mW Po = 500 mW cw 5 9 12 30 35 45 50x1 20 25 40 Monitor Current Im Po = 500 mW 0.6 1.5 UNIT mW mA mA V W/A nm ° ° µm² °C mA 10.08.2010 rlt808500g.doc 1 of 1 ...