Document
RLT80805MGS
Laser Diode Technical Data
ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC )
Features • Index Guided MQW Structure • Wavelength : 808 nm (Typ.) • Optical Power : 5 mW CW • Threshold Current : 25 mA ( Typ. ) • Package Style : TO-18 (5.6 mmØ)
DESCRIPTION
SYMBOL RATED VALUE
Optical Power (mW)
Operation Temperature (oC) Storage Temperature (oC)
LD Reverse Voltage (V) PD Reverse Voltage (V)
Po Top Tstg VLDR VPDR
5 -10 to +50 -40 to +85
2 30
OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC )
DESCRIPTION
SYMBOL
Lasing Wavelength (nm)
Threshold Current (mA) Operating Current (mA) Operating Voltage (V) Monitor Current (mA)
Slope Efficiency (mW/mA)
Beam Divergence ⎪⎢ (°) Beam Divergence ⊥ (°) Astigmatism (μm)
λp Ith Iop Vop Im η θ⎪⎢ θ⊥ As
MIN. 803 20 17 1.8 0.1 0.5
8 25 *
TYPICAL 808 25 30 2.0 0.3 0.7 10 30 11
MAX. 815 50 35 2.5 0.6 0.9 12 40
*
TEST CONDITION Po=5mW Po=5mW Po=5mW Po=5mW
Po=5mW, VR=5V
*** Po=5mW Po=5mW
Po=5mW, NA=0.4
03.08.2010
rlt80805mgs.doc
1 of 1
.