RLT785-100MGS

RLT785-100MGS v 1.1 29.01.2015 Description RLT785-100MGS is a single mode Laser Diode emitting at typical 785 nm with rated output power of 100 mW CW at room temperature. The 5.6 mm TO package includes a cap and flat window, and contains a built-in monitor PD. Maximum Ratings (TCASE=25°C) Parameter Symbol Forward Current Reverse Voltage Operating Temperature Storage Temperature Lead Solder Temperature *2 *1 must be completed within 5 seconds IF VF TCASE TSTG TSLD Min. - 10 - 40 Electro-Optical Characteristics (TCASE=25°C) Values Max. 2.0 + 70 + 85 + 280 Unit mA V °C °C °C Parameter Peak Wavelength Half Width Optical Output Power (CW Mode) Optical Output Power (Pulse Mode ) *1 Laser Beam Mode Threshold Current Forward Current Forward Voltage Slope Efficiency Beam Divergence Beam Divergence Monitor Current PD Reverse Voltage *1 duty=50%, pulse width = 0.5 µs Symbol λP ∆λ PO PO ITH IOP VOP η ӨII Ө┴ IM VPDR Min. 775 7 15 Values Typ. 785 2.0 100 220 Single Mode 35 140 2.0 1.1 9 17 0.5 30 Max. 795 55 160 2.5 1.3 10 19 0.8 Unit nm nm mW mW mA mA V mW/mA ° ° mA V www.roithner-laser.com 1 Typical Performance Curves P/I/V Curve Monitor Current (µA) Optical Output Power (mW) Forward Voltage (V) Forward Current (mA) www.roithner-laser.com 2 Outline Dimensions RLT785-100MGS 5.6 mm, flat window All Dimensions in mm Electrical Connection n-type Lead PIN 1 PIN 2 PIN 3 Description LD Cathode LD Anode, PD Cathode PD Anode www.roithner-laser.com 3 Precautions ...