QL78J6S-B

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL78J6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL78J6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 0 2004 ♦OVERVIEW QL78J6S-A/B/C is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 50mW for industrial optical module and sensor application ♦APPLICATION - Sensor - Industrial optical module ♦FEATURES - Visible Light Output : λp = 780 nm - Optical Power Output : 50mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL78J6SA Fig. 2 QL78J6SB Fig. 3 QL78J6SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 50 2 30 −10 ~ +60 −40 ~ +85 Unit mW V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Differential efficiency Operating Voltage Lasing Wavelength Beam Divergence Beam Angle Monitor Current Optical Distance Astigmatism Symbols Po Ith Iop Vop λp ...