QL68I6S-A

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL68I6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer WWW.QSILaser.com QL68I6S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd 2004. Rev 1. ♦ OVERVIEW QL68I6S-A/B/C is a MOCVD grown 0.68 m band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for opto-electronic devices such as Industrials. ♦ APPLICATION Industrials Laser Module ♦ FEATURES Visible Light Output : λp = 685nm Optical Power Output : 30 mW CW Package Type : TO-18 (5.6mmφ) Built-in Photo Diode for Monitoring Laser Output ♦ ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathod, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathod (Fig. 3) Fig. 1 QL68I6SA Fig. 2 QL68I6SB Fig. 3 QL68I6SC ♦ ABSOLUTE MAXIMUM RATING at Tc=25 Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 35 2 30 -10 +60 -40 +85 Unit mW V V °C °C ♦ ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25 Items Optical Output Power Threshold Current Operating Current Operating Voltage Lasing Wavelength Beam Divergence Beam Angle Monitor Current Astigmatism Optical Distance Symbols Po Ith Iop Vop λp θ II θ⊥ ∆ θ II ∆θ⊥ Im ∆X, ∆Y, ∆Z Min. 2 670 7 16 - 0.05 - Typ. 30 35 80 2.4 685 9.5 20 0.2 - Max. 60 140 3 700 12 25 2.0 2...