QL65J7SA

QL65J7SA TECHNICAL DATA High Power Infrared Laser Diode Features Visible Light Output: typ. 660nm Optical Power Output: 50 mW CW Package Type: TO-18 (5.6 mm) Built-in Photo Diode for Monitoring Laser Diode Applications DVD R/RW Optical Module PIN CONNECTION 1. Laserdiode cathode 2. Laserdiode anode and photodiode cathode 3. Photodiode anode Absolute Maximum Rating (TC=25°C) Type Absolute Maximum Ratings Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbol P V V TOP TSTG Value 60 2 30 -10 … +75 -40 … +85 Unit mW V V °C °C Electgrical and Optical Characteristics (TC=25°C) Type Optical Specification Output Power Lasing Wavelength Beam Divergence Beam Angle Electrical Specification Slope Efficiency Threshold Current Operation Current Operation Voltage Symbol PO λP θІІ θ┴ ΔθІІ Δθ┴ ES Ith IOP VOP Min. 653 6 15 - 30 - Typ. 50 660 9 20 - 1.0 45 90 2.6 Max. 667 12 25 ±3 ±3 60 120 3.0 Unit Condition mW PO =50mW nm PO =50mW deg PO =50mW deg PO =50mW deg PO =50mW deg PO =50mW mW/mA mA mA V PO =30~50mW PO =50mW PO =50mW PO =50mW 23.02.2010 QL65J7SA 1 of 2 Package Dimensons TO-18 Package (Unit:mm) 23.02.2010 QL65J7SA 2 of 2 ...