LASER DIODE
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL65I7S-A/B/C-H
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Description
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL65I7S-A/B/C-H
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL65I7S-A/B/C-H
InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd.
Ver. 2 Mar.2012
♦OVERVIEW
QL65I7S-A/B/C-H is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 35Mw for optoelectronic devices such as DVD-RAM and Industrial Sensor.
♦APPLICATION
- Industrial Sensor - DVD-RAM
♦FEATURES
- Visible Light Output : λp = 658 nm(Typ.)
- Optical Power Output : 35mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3)
Fig. 1 QL65I7SA-H
Fig. 2 QL65I7SB-H
Fig. 3 QL65I7SC-H
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Symbols
Values
Optical Output Power Laser Diode Reverse
Voltage Photo Diode Reverse
Voltage Operating Temperature
Storage Temperature
Po(CW) VR
VR Topr Tstg
40 2
30 −10 ~ +70 −40 ~ +85
Unit mW V
V °C °C
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C
Items Optical Output Power Threshold Current Operating Current Slope Efficiency Operating Voltage Lasing Wavelength
Beam Divergence
Beam Angle
Monitor Current Optical Distance
Symbols ...
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