QL65I7S-A-S

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65I7S-A/B/C-S Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65I7S-A/B/C-S InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 1 May. 2008 ♦OVERVIEW QL65I7S-A/B/C-S is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 35mW for optoelectronic devices such as DVD-RAM and Inderstrial Sensor. ♦APPLICATION - Inderstrial Sensor - DVD-RAM ♦FEATURES - Visible Light Output : λp = 658 nm(typ.) - Optical Power Output : 35mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL65I7SA-S Fig. 2 QL65I7SB-S Fig. 3 QL65I7SC-S ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Symbols Values Unit Optical Output Power Po(CW) 40 mW Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature VR VR Topr Tstg 2 30 −10 ~ +70 −40 ~ +85 V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Slope Efficiency Operating Voltage Lasing Wavelength Beam Divergence Beam Angle Monitor Current Optical Distance...