QL65D5S-B-L1

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL65D5S-A/B/C-L1 Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65D5S-A/B/C-L1 InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver.1 May. 2008 ♦OVERVIEW QL65D5S-A/B/C-L1 is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Laser Pointer & Bar Code Reader ♦APPLICATION - Laser Pointer - Optical Leveler - Bar Code Reader ♦FEATURES - Visible Light Output : λp = 650 nm - Optical Power Output : 5mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL65D5SA-L1 Fig. 2 QL65D5SB-L1 Fig. 3 QL65D5SC-L1 ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 7 2 30 −10 ~ +50 −40 ~ +85 Unit mW V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Symbols Po Ith Iop Min. - Typ. Max. 514 18 18 22 Unit mW mA mA Condition Po=5mW Slope Efficiency SE 0...