QL63H5S-C

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL63H5S-A/B/C Tentative Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL63H5S-A/B/C InGaAlP Laser Diode Tentative Quantum Semiconductor International Co., Ltd. Ver. 3 2006 ♦OVERVIEW QL63H5S-A/B/C is a MOCVD grown 635nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 20mW for optoelectronic devices such as Optical Leveler and Modules. ♦APPLICATION - Bar Code Scanner - Laser Module ♦FEATURES - Visible Light Output : λp = 635 nm - Optical Power Output : 20mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL63H5SA Fig. 2 QL63H5SB Fig. 3 QL63H5SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Tentative Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 24 2 30 −10 ~ +50 −40 ~ +85 Unit mW V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C 1)2) Items Symbols Min. Typ. Max. Unit Optical Output Power Po - 20 - mW Threshold Current Ith - 30 50 mA Operating Current Iop - 60 80 mA Operating Voltage Vop - ...