LASER DIODE
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL63F5S-A/B/C
Signature of Approval
Approved by Checked b...
Description
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL63F5S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL63F5S-A/B/C
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver. 04
2008
♦OVERVIEW
QL63G5S-A/B/C is a MOCVD grown 635nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW for optoelectronic devices such as Optical Leveler and Modules.
♦APPLICATION
- Laser Pointer - Bar Code Scanner - Laser Module
♦FEATURES
- Visible Light Output : λp = 635 nm
- Optical Power Output : 10mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3)
Fig. 1 QL63F5SA
Fig. 2 QL63F5SB
Fig. 3 QL63F5SC
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Optical Output Power Laser Diode Reverse
Voltage Photo Diode Reverse
Voltage Operating Temperature
Storage Temperature
Symbols P V
V Topr Tstg
Values 12 2
30 −10 ~ +50 −40 ~ +85
Unit mW V
V °C °C
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C 1)2)
Items
Symbols Min. Typ. Max.
Unit
Optical Output Power
Po
- 10 -
mW
Threshold Current
Ith
- 35 47
mA
Operating Current
Iop
- 45 55
mA
Operating Voltage
Vop
- 2.2 2.5
V
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