QL63D5SA

QL63D5SA InGaAlP Laser Diode 2002 ♦ OVERVIEW QL63D5SA is a MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Optical Leveler and Modules. ♦ APPLICATION Pointer Optical Leveler Laser Module ♦ FEATURES Visible Light Output: λp = 635 nm (TM Mode) Optical Power Output: 5 mW CW Package Type: TO-18 Built-in Photo Diode for Monitoring Laser Output ♦ ELECTRICAL CONNECTION Bottom View Pin Configuration ♦ ABSOLUTE MAXIMUM RATING at Tc = 25° C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 7 2 30 -10 ... +50 -40 ... +85 Unit mW V V °C °C ♦ ELECTRICAL and OPTICAL CHARACTERISTICS at Tc = 25° C Items Symbols Min. Typ. Max. Unit Condition Optical Output Power Po - 5 - mW - Threshold Current Ith - 35 50 mA - Operating Current Iop - 45 60 mA Po = 5 mW Operating Voltage Lasing Wavelength Beam Divergence Beam Angle Vop λp θII θ⊥ ∆θ II ∆θ⊥ - 2.2 2.7 V 630 635 640 nm 6 8 15 deg 22 35 40 deg - - 4.5 deg -- 2.5 deg Po = 5 mW Po = 5 mW Po = 5mW Po = 5 mW Po = 5 mW Po = 5 mW Monitor Current Optical Distance Im ∆X,∆Y,∆Z 0.1 0.2 -- 0.5 mA 60 µm Po = 5 mW ♦ PACKAGE DIMENSION mm ...