D1666

SavantIC Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package www.dat·aCshoemet4pule.cmoment to type 2SB1133 ·High reliability ·Wide area of safe operation APPLICATIONS ·For low-frequency and general-purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Product Specification 2SD1666 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-peak PC Collector dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 MAX 60 60 6 3 8 2 25 150 -40~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1666 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=: V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A VBE Base-emitter on voltage IC=0.5A ; VCE=5V ICBO Collector cut-off current VCB=40V; IE=0 IEBO Emitter cut-off current VEB=4V; IC=0 hFE-1 DC current gain IC=0.5A ; VCE=5V hFE-2 DC current gain IC=3A ; VCE=5V COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=0.5A ; VC...