CPV362M4UPbF

www.vishay.com CPV362M4UPbF Vishay Semiconductors IGBT SIP Module (Fast IGBT) IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE IRMS per phase (3.1 kW total) with TC = 90 °C TJ Supply voltage 4.6 ARMS 125 °C 360 Vdc Power factor 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 3.9 A, 25 °C Package 1.7 V SIP Circuit Three Phase Inverter FEATURES Fully isolated printed circuit board mount package Switching-loss rating includes all “tail” losses HEXFRED® soft ultrafast diodes Optimized for high speed over 5 kHz See fig. 1 for current vs. frequency curve RoHS COMPLIANT UL approved file E78996 Designed and qualified for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage SYMBOL VCES Continuous collector current, each IGBT IC Pulsed collector current Cla...