CPV362M4FPbF

www.vishay.com CPV362M4FPbF Vishay Semiconductors IGBT SIP Module (Fast IGBT) IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE IRMS per phase (3.1 kW total) with TC = 90 °C TJ 11 A 125 °C Supply voltage Power factor 360 VDC 0.8 Modulation depth See fig. 1 115 % VCE(on) (typical) at IC = 4.8 A, 25 °C Package 1.41 V SIP Circuit Three Phase Inverter FEATURES Fully isolated printed circuit board mount package Switching-loss rating includes all “tail” losses HEXFRED® soft ultrafast diodes Optimized for medium speed 1 to 10 kHz See fig. 1 for current vs. frequency curve RoHS COMPLIANT Designed and qualified for industrial level UL approved file E78996 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The IGBT technology is the key to the advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current, each IGBT IC Pulsed collector current ICM Clamped induct...