VS-25MT060WFAPbF

www.vishay.com VS-25MT060WFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP (Warp Speed IGBT), 50 A MTP PRODUCT SUMMARY VCES IC DC VCE(on) Package Circuit 600 V 69 A 2.22 V MTP Full bridge FEATURES Generation 4 warp speed IGBT technology HEXFRED® antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMT thermistor Al2O3 DBC Very low stray inductance design for high speed operation Speed 8 kHz to 60 kHz > 20 kHz hard switching, > 200 kHz resonant mode UL approved file E78996 Designed and qualified for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Optimized for welding, UPS and SMPS applications Low EMI, requires less snubbing Direct mounting to heatsink PCB solderable terminals Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current Peak switching current Diode continuous forward current Peak diode forward current Gate to emitter voltage RMS isolation voltage Maximum power dissipation per single IGBT ICM ILM IF IFM VGE VISOL PD TEST CONDITIONS TC = 25 °C TC = 80 °C TC = 100 °C Any terminal to case, t = 1 minute TC = 25 °C TC = 100 °C MAX. 600 69 46 200 200 25 200 ± 20 2500 195 78 UNITS V A V W Revision: 30-Oct-13 1 Document Number: 94539 For technical questions within your region: DiodesA...