VS-20MT120UFP

www.vishay.com VS-20MT120UFP Vishay Semiconductors “Full Bridge” IGBT MTP (Ultrafast NPT IGBT), 40 A MTP PRIMARY CHARACTERISTICS VCES IC at TC = 25 °C VCE(on) Speed 1200 V 40 A 3.29 V 8 kHz to 30 kHz Package MTP Circuit configuration Full bridge FEATURES Ultrafast non punch through (NPT) technology Positive VCE(on) temperature coefficient 10 μs short circuit capability HEXFRED® antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Aluminum nitride DBC Very low stray inductance design for high speed operation UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Optimized for welding, UPS and SMPS applications Rugged with ultrafast performance Outstanding ZVS and hard switching operation Low EMI, requires less snubbing Excellent current sharing in parallel operation Direct mounting to heatsink PCB solderable terminals Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter breakdown voltage VCES Continuous collector current IC Pulsed collector current Clamped inductive load current Diode continuous forward current Diode maximum forward current Gate to emitter voltage RMS isolation voltage ICM ILM IF IFM VGE VISOL Maximum power dissipation (only IGBT) PD TEST CONDITIONS TC = 25 °C TC = 106 °C TC = 106 °C Any terminal to case, t = 1...