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VS-GB400TH120U Dataheets PDF



Part Number VS-GB400TH120U
Manufacturers Vishay
Logo Vishay
Description Molding Type Module IGBT
Datasheet VS-GB400TH120U DatasheetVS-GB400TH120U Datasheet (PDF)

www.vishay.com VS-GB400TH120U Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 400 A Double INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 400 A, TJ = 25 °C Package Circuit 1200 V 400 A 3.10 V Double INT-A-PAK Half bridge FEATURES • 10 μs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FW.

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www.vishay.com VS-GB400TH120U Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 400 A Double INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 400 A, TJ = 25 °C Package Circuit 1200 V 400 A 3.10 V Double INT-A-PAK Half bridge FEATURES • 10 μs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • Inductive heating • Switching mode power supplies • Electronic welder DESCRIPTION Vishay’s IGBT power module provides ultrafast switching speed as well as short circuit ruggedness. It is designed for applications such as electronic welder and inductive heating. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate to emitter voltage Collector current Pulsed collector current Diode continuous forward current Diode maximum forward current VCES VGES IC ICM (1) IF IFM (1) TC = 25 °C TC = 80 °C tp = 1 ms TC = 80 °C tp = 1 ms Maximum power dissipation PD TJ = 150 °C Short circuit withstand time TSC TJ = 125 °C RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: Pulse width limited by maximum junction temperature. MAX. 1200 ± 20 660 400 800 400 800 2660 10 2500 UNITS V A W μs V Revision: 03-Jul-14 1 Document Number: 94789 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-GB400TH120U Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter breakdown voltage Collector to emitter voltage Gate to emitter threshold voltage Collector cut-off current Gate to emitter leakage current V(BR)CES VCE(on) VGE(th) ICES IGES TJ = 25 °C VGE = 15 V, IC = 400 A, TJ = 25 °C VGE = 15 V, IC = 400 A, TJ = 125 °C VCE = VGE, IC = 4.0 mA, TJ = 25 °C VCE = VCES, VGE = 0 V, TJ = 25 °C VGE = VGES, VCE = 0 V, TJ = 25 °C MIN. 1200 4.4 - TYP. - 3.10 3.45 4.9 - MAX. UNITS - 3.60 V 6.0 5.0 mA 400 nA SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Input capacitance Output capacitance Reverse transfer capacitance SC data Internal gate rsistance Stray inductance Module lead resistance, terminal to chip SYMBOL td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Coes Cres ISC Rg LCE RCC’+EE’ TEST CONDITIONS VCC = 600 V, IC = 400 A, Rg = 2.2 , VGE = ± 15 V, TJ = 25 °C VCC = 600 V, IC = 400 A, Rg = 2.2 , VGE = ± 15 V, TJ = 125 °C VGE = 0 V, VCE = 30 V, f = 1.0 MHz tp  10 μs, VGE = 15 V, TJ = 25 °C,  VCC = 600 V, VCEM  1200 V TC = 25 °C MIN. - - - TYP. 680 142 638 99 19.0 32.5 690 146 669 108 26.1 36.7 33.7 2.99 1.21 2600 0.5 0.32 MAX. UNITS ns mJ ns mJ - nF - -A - 18 nH - m DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Forward voltage Reverse recovery charge Peak reverse recovery current Reverse recovery energy VF IF = 400 A TJ = 25 °C TJ = 125 °C TJ = 25 °C Qrr TJ = 125 °C Irr IF = 400 A, VR = 600 V, dIF/dt = - 2850 A/μs TJ = 25 °C VGE = - 15 V TJ = 125 °C TJ = 25 °C Erec TJ = 125 °C MIN. - TYP. 1.95 1.85 24.1 44.3 220 295 13.9 24.8 MAX. UNITS 2.25 V - μC - A - mJ - Revision: 03-Jul-14 2 Document Number: 94789 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IC (A) www.vishay.com VS-GB400TH120U Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range Storage temperature range Junction to case IGBT Diode TJ TStg RJC Case to sink (Conductive grease applied) Mounting torque RCS Power terminal screw: M5 Mounting screw: M6 Weight Weight of module MIN. TYP. MAX. UNITS - - 150 °C - 40 - 125 °C - - 0.047 - - 0.096 K/W - 0.035 - 2.5 to 5.0 3.0 to 6.0 Nm - 350 - g 800 VGE = 15 V 700 600 500 400 300 25 °C 125 °C 200 100 0 01 2 3 45 VCE (V) Fig. 1 - IGBT Typical Output Characteristics 800 VCE = 15 V 700 600 500 400 300 125 °C 200 100 25 °C 0 45 6 7 8 9 10 11 VGE (V) .


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