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VS-GB400TH120U
Vishay Semiconductors
Molding Type Module IGBT, 2 in 1 Package, 1200 V and 400 A
Double INT-A-PAK
PRODUCT SUMMARY
VCES
IC at TC = 80 °C VCE(on) (typical) at IC = 400 A, TJ = 25 °C
Package
Circuit
1200 V 400 A 3.10 V Double INT-A-PAK Half bridge
FEATURES • 10 μs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper
Bonding) technology • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS • Inductive heating • Switching mode power supplies • Electronic welder
DESCRIPTION Vishay’s IGBT power module provides ultrafast switching speed as well as short circuit ruggedness. It is designed for applications such as electronic welder and inductive heating.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage Gate to emitter voltage
Collector current
Pulsed collector current Diode continuous forward current Diode maximum forward current
VCES VGES
IC
ICM (1) IF
IFM (1)
TC = 25 °C TC = 80 °C tp = 1 ms TC = 80 °C tp = 1 ms
Maximum power dissipation
PD TJ = 150 °C
Short circuit withstand time
TSC TJ = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note (1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX. 1200 ± 20 660 400 800 400 800 2660
10 2500
UNITS V
A
W μs V
Revision: 03-Jul-14
1 Document Number: 94789
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-GB400TH120U
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage Collector cut-off current Gate to emitter leakage current
V(BR)CES
VCE(on)
VGE(th) ICES IGES
TJ = 25 °C VGE = 15 V, IC = 400 A, TJ = 25 °C VGE = 15 V, IC = 400 A, TJ = 125 °C VCE = VGE, IC = 4.0 mA, TJ = 25 °C VCE = VCES, VGE = 0 V, TJ = 25 °C VGE = VGES, VCE = 0 V, TJ = 25 °C
MIN. 1200
4.4 -
TYP. -
3.10 3.45 4.9
-
MAX. UNITS -
3.60 V
6.0 5.0 mA 400 nA
SWITCHING CHARACTERISTICS
PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Input capacitance Output capacitance Reverse transfer capacitance
SC data
Internal gate rsistance Stray inductance Module lead resistance, terminal to chip
SYMBOL td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Coes Cres
ISC
Rg LCE RCC’+EE’
TEST CONDITIONS
VCC = 600 V, IC = 400 A, Rg = 2.2 , VGE = ± 15 V, TJ = 25 °C
VCC = 600 V, IC = 400 A, Rg = 2.2 , VGE = ± 15 V, TJ = 125 °C
VGE = 0 V, VCE = 30 V, f = 1.0 MHz tp 10 μs, VGE = 15 V, TJ = 25 °C, VCC = 600 V, VCEM 1200 V
TC = 25 °C
MIN. -
-
-
TYP. 680 142 638 99 19.0 32.5 690 146 669 108 26.1 36.7 33.7 2.99 1.21
2600
0.5 0.32
MAX. UNITS ns mJ ns mJ - nF -
-A
- 18 nH - m
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Forward voltage Reverse recovery charge Peak reverse recovery current Reverse recovery energy
VF IF = 400 A
TJ = 25 °C TJ = 125 °C
TJ = 25 °C Qrr
TJ = 125 °C
Irr
IF = 400 A, VR = 600 V, dIF/dt = - 2850 A/μs
TJ = 25 °C
VGE = - 15 V
TJ = 125 °C
TJ = 25 °C Erec
TJ = 125 °C
MIN. -
TYP. 1.95 1.85 24.1 44.3 220 295 13.9 24.8
MAX. UNITS 2.25
V -
μC -
A -
mJ -
Revision: 03-Jul-14
2 Document Number: 94789
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IC (A)
www.vishay.com
VS-GB400TH120U
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Storage temperature range
Junction to case
IGBT Diode
TJ TStg
RJC
Case to sink (Conductive grease applied) Mounting torque
RCS
Power terminal screw: M5 Mounting screw: M6
Weight
Weight of module
MIN. TYP. MAX. UNITS
- - 150 °C
- 40 - 125 °C
- - 0.047
- - 0.096 K/W
- 0.035 -
2.5 to 5.0 3.0 to 6.0
Nm
- 350 -
g
800 VGE = 15 V
700
600
500
400
300
25 °C 125 °C
200
100
0 01 2 3 45
VCE (V)
Fig. 1 - IGBT Typical Output Characteristics
800 VCE = 15 V
700
600
500
400
300 125 °C
200
100 25 °C
0 45 6
7 8 9 10 11
VGE (V)
.