VS-GA100TS60SFPbF

www.vishay.com VS-GA100TS60SFPbF Vishay Semiconductors “Half-Bridge” IGBT INT-A-PAK, (Standard Speed IGBT), 100 A INT-A-PAK PRODUCT SUMMARY VCES IC DC VCE(on) at 100 A, 25 °C Package Circuit 600 V 220 A 1.11 V INT-A-PAK Half bridge FEATURES Standard speed PT IGBT technology Standard speed: DC to 1 kHz, optimized for hard switching speed FRED Pt® antiparallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL approved file E78996 Designed for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink Very low junction to case thermal resistance Low EMI ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current Peak switching current Gate to emitter voltage RMS isolation voltage ICM ILM VGE VISOL Maximum power dissipation PD Operating junction temperature range Storage temperature range TJ TStg TEST CONDITIONS TC = 25 °C TC = 130 °C Any terminal to case, t = 1 min TC = 25 °C TC = 100 °C MAX. 600 220 100 440 440 ± 20 2500 780 312 -40 to +150 -40 to +125 UNITS V A V W °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage curr...