Ultrafast Speed IGBT
www.vishay.com
VS-GB150TS60NPbF
Vishay Semiconductors
INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 138 A
INT-A-PAK...
Description
www.vishay.com
VS-GB150TS60NPbF
Vishay Semiconductors
INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 138 A
INT-A-PAK
PRODUCT SUMMARY
VCES IC DC VCE(on) at 150 A, 25 °C Package Circuit
600 V 138 A 2.64 V INT-A-PAK Half bridge
FEATURES Generation 5 Non Punch Through (NPT)
technology Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz Low VCE(on) 10 μs short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics Industry standard package Al2O3 DBC UL approved file E78996 Designed for industrial level Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS Benchmark efficiency for UPS and welding application Rugged transient performance Direct mounting on heatsink Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Gate to emitter voltage Maximum power dissipation Isolation voltage Operating junction temperature range Storage temperature range
VCES
IC
ICM ILM
IF
VGE
PD
VISOL TJ TStg
TC = 25 °C TC = 80 °C
TC = 25 °C TC = 80 °C
TC = 25 °C TC = 80 °C Any terminal to case, t = 1 min
MAX. 600 138 93 300 300 178 121 ± 20 500 280 2500 -40 to +150 -40 to +150
UNITS V
A
V W V °C
Revision: 29-Apr-14
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