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VS-GB150TS60NPbF

Vishay

Ultrafast Speed IGBT

www.vishay.com VS-GB150TS60NPbF Vishay Semiconductors INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 138 A INT-A-PAK...


Vishay

VS-GB150TS60NPbF

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Description
www.vishay.com VS-GB150TS60NPbF Vishay Semiconductors INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 138 A INT-A-PAK PRODUCT SUMMARY VCES IC DC VCE(on) at 150 A, 25 °C Package Circuit 600 V 138 A 2.64 V INT-A-PAK Half bridge FEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz Low VCE(on) 10 μs short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL approved file E78996 Designed for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Benchmark efficiency for UPS and welding application Rugged transient performance Direct mounting on heatsink Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Gate to emitter voltage Maximum power dissipation Isolation voltage Operating junction temperature range Storage temperature range VCES IC ICM ILM IF VGE PD VISOL TJ TStg TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C Any terminal to case, t = 1 min MAX. 600 138 93 300 300 178 121 ± 20 500 280 2500 -40 to +150 -40 to +150 UNITS V A V W V °C Revision: 29-Apr-14 1...




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