VS-70MT060WHTAPbF

www.vishay.com VS-70MT060WHTAPbF Vishay Semiconductors “Half Bridge” IGBT MTP (Warp 2 Speed IGBT), 70 A MTP PRODUCT SUMMARY VCES VCE(on) typical at VGE = 15 V IC at TC = 78 °C Package Circuit 600 V 2.1 V 70 A MTP Half bridge FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED® antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation UL pending Speed 60 kHz to 150 kHz UL approved file E78996 Designed and qualified for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Optimized for welding, UPS and SMPS applications Lower coduction losses and switching losses Low EMI, requires less snubbing Direct mounting to heatsink PCB solderable terminals ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current Peak switching current Diode continuous forward current Peak diode forward current Gate to emitter voltage RMS isolation voltage ICM ILM IF IFM VGE VISOL Maximum power dissipation, IGBT PD TEST CONDITIONS TC = 25 °C TC = 78 °C TC = 78 °C Any terminal to case, t = 1 min TC = 25 °C TC = 100 °C MAX. 600 100 70 300 300 53 200 ± 20 2500 347 139 UNITS V A V W Revision: 30-Oct-13 1 Document Number: 94469 For technical questions within your region: [email protected], DiodesA...