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VS-GA250SA60S Dataheets PDF



Part Number VS-GA250SA60S
Manufacturers Vishay
Logo Vishay
Description IGBT
Datasheet VS-GA250SA60S DatasheetVS-GA250SA60S Datasheet (PDF)

www.vishay.com VS-GA250SA60S Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A SOT-227 PRODUCT SUMMARY VCES VCE(on) (typical) at 200 A, 25 °C IC at TC = 90 °C (1) Package 600 V 1.33 V 250 A SOT-227 Circuit Single Switch no Diode Note (1) Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • .

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www.vishay.com VS-GA250SA60S Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A SOT-227 PRODUCT SUMMARY VCES VCE(on) (typical) at 200 A, 25 °C IC at TC = 90 °C (1) Package 600 V 1.33 V 250 A SOT-227 Circuit Single Switch no Diode Note (1) Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • Designed and qualified for industrial level • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, TIG welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Continuous collector current Pulsed collector current Clamped Inductive load current Gate to emitter voltage IC (1) TC = 25 °C TC = 90 °C ICM Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature ILM VCC = 80 % (VCES), VGE = 20 V,  L = 10 μH, Rg = 2.0 , VGE Power dissipation TC = 25 °C PD TC = 90 °C Isolation voltage VISOL Any terminal to case, t = 1 minute Note (1) Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals MAX. 600 400 250 400 400 ± 20 961 462 2500 UNITS V A V W V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range Thermal resistance junction to case Thermal resistance case to heatsink Weight Mounting torque Case style TJ, TStg RthJC RthCS Flat, greased surface SOT-227 MIN. -40 - TYP. 0.05 30 - MAX. 150 0.13 1.3 UNITS °C °C/W g Nm Revision: 13-Sep-13 1 Document Number: 94704 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-GA250SA60S Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter breakdown voltage Emitter to collector breakdown voltage V(BR)CES V(BR)ECS (1) VGE = 0 V, IC = 1 mA VGE = 0 V, IC = 1.0 A IC = 100 A Collector to emitter voltage VCE(on) IC = 200 A IC = 100 A, TJ = 125 °C IC = 200 A, TJ = 125 °C VGE = 15 V IC = 100 A, TJ = 150 °C Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ IC = 200 A, TJ = 150 °C VCE = VGE, IC = 250 μA VCE = VGE, IC = 250 μA, TJ = 125 °C VCE = VGE, IC = 1 mA, 25 °C to 125 °C Collector to emitter leakage current VGE = 0 V, VCE = 600 V ICES VGE = 0 V, VCE = 600 V, TJ = 125 °C VGE = 0 V, VCE = 600 V, TJ = 150 °C Gate to emitter leakage current IGES VGE = ± 20 V Notes (1) Pulse width  80 μs; duty factor  0.1 % MIN. 600 18 3.0 - TYP. - 1.10 1.33 1.02 1.32 1.02 1.33 4.5 3.1 -12 20 0.2 0.6 - MAX. 1.3 1.66 6.0 - 1000 10 ± 250 UNITS V mV/°C μA mA nA SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Total gate charge (turn-on) Gate-to-emitter charge (turn-on) Qg Qge IC = 100 A, VCC = 600 V, VGE = 15 V Gate-to-collector charge (turn-on) Qgc Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) TJ = 25 °C IC = 100 A VCC = 480 V VGE = 15 V Rg = 5.0  L = 500 μH TJ = 125 °C IC = 100 A  VCC = 480 V VGE = 15 V Rg = 5.0  L = 500 μH Energy losses include tail and diode recovery. Diode used 60APH06 Fall time Internal emitter inductance tf Between lead and LE center of die contact Input capacitance Cies Output capacitance Reverse transfer capacitance Coes Cres VGE = 0 V , VCC = 30 V, f = 1.0 MHz MIN. - - - TYP. 770 100 260 0.55 25 25.5 267 42 310 450 0.67 43.0 43.7 275 50 350 700 MAX. 1200 150 380 - UNITS nC mJ ns mJ ns 5.0 - nH 16 250 1040 190 - pF Revision: 13-Sep-13 2 Document Number: 94704 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Allowable Case Temperature (°C) IC - Collector to Emitter Current (A) www.vishay.com 160 140 120 100 80 60 40 20 0 0 50 100 15.


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