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VS-GA250SA60S
Vishay Semiconductors
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A
SOT-227
PRODUCT SUMMARY
VCES VCE(on) (typical) at 200 A, 25 °C
IC at TC = 90 °C (1) Package
600 V 1.33 V 250 A SOT-227
Circuit
Single Switch no Diode
Note
(1) Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals
FEATURES • Standard: Optimized for minimum saturation
voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • Designed and qualified for industrial level • UL approved file E78996 • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS • Designed for increased operating efficiency in power
conversion: UPS, SMPS, TIG welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
Pulsed collector current Clamped Inductive load current Gate to emitter voltage
IC (1)
TC = 25 °C TC = 90 °C
ICM
Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature
ILM
VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, Rg = 2.0 ,
VGE
Power dissipation
TC = 25 °C PD
TC = 90 °C
Isolation voltage
VISOL
Any terminal to case, t = 1 minute
Note (1) Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals
MAX. 600 400 250
400
400
± 20 961 462 2500
UNITS V
A
V W V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature range Thermal resistance junction to case Thermal resistance case to heatsink Weight Mounting torque Case style
TJ, TStg RthJC RthCS
Flat, greased surface
SOT-227
MIN.
-40 -
TYP.
0.05 30 -
MAX.
150 0.13
1.3
UNITS °C
°C/W
g Nm
Revision: 13-Sep-13
1 Document Number: 94704
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-GA250SA60S
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage Emitter to collector breakdown voltage
V(BR)CES V(BR)ECS (1)
VGE = 0 V, IC = 1 mA VGE = 0 V, IC = 1.0 A
IC = 100 A
Collector to emitter voltage
VCE(on)
IC = 200 A IC = 100 A, TJ = 125 °C IC = 200 A, TJ = 125 °C
VGE = 15 V
IC = 100 A, TJ = 150 °C
Gate threshold voltage
VGE(th)
Temperature coefficient of threshold voltage VGE(th)/TJ
IC = 200 A, TJ = 150 °C VCE = VGE, IC = 250 μA VCE = VGE, IC = 250 μA, TJ = 125 °C VCE = VGE, IC = 1 mA, 25 °C to 125 °C
Collector to emitter leakage current
VGE = 0 V, VCE = 600 V ICES VGE = 0 V, VCE = 600 V, TJ = 125 °C
VGE = 0 V, VCE = 600 V, TJ = 150 °C
Gate to emitter leakage current
IGES
VGE = ± 20 V
Notes (1) Pulse width 80 μs; duty factor 0.1 %
MIN. 600 18
3.0 -
TYP. -
1.10 1.33 1.02 1.32 1.02 1.33 4.5 3.1 -12 20 0.2 0.6
-
MAX. 1.3
1.66 6.0 -
1000 10
± 250
UNITS
V
mV/°C μA mA nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on) Gate-to-emitter charge (turn-on)
Qg Qge IC = 100 A, VCC = 600 V, VGE = 15 V
Gate-to-collector charge (turn-on)
Qgc
Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time
Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off)
TJ = 25 °C IC = 100 A VCC = 480 V VGE = 15 V Rg = 5.0 L = 500 μH
TJ = 125 °C IC = 100 A VCC = 480 V VGE = 15 V Rg = 5.0 L = 500 μH
Energy losses include tail and diode recovery. Diode used 60APH06
Fall time Internal emitter inductance
tf Between lead and
LE center of die contact
Input capacitance
Cies
Output capacitance Reverse transfer capacitance
Coes Cres
VGE = 0 V , VCC = 30 V, f = 1.0 MHz
MIN. -
-
-
TYP. 770 100 260 0.55 25 25.5 267 42 310 450 0.67 43.0 43.7 275 50 350 700
MAX. 1200 150 380
-
UNITS nC mJ ns mJ ns
5.0 - nH
16 250 1040 190
-
pF
Revision: 13-Sep-13
2 Document Number: 94704
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Allowable Case Temperature (°C)
IC - Collector to Emitter Current (A)
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160 140 120 100 80 60 40 20
0 0 50 100 15.