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VS-VSKJS209-150 Dataheets PDF



Part Number VS-VSKJS209-150
Manufacturers Vishay
Logo Vishay
Description Power Modules Schottky Rectifier
Datasheet VS-VSKJS209-150 DatasheetVS-VSKJS209-150 Datasheet (PDF)

www.vishay.com VS-VSKJS209/150 Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A ADD-A-PAK FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY IF(AV) VR Package Circuit 200 A 150 V ADD-A-PAK Two diodes common anode ME.

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www.vishay.com VS-VSKJS209/150 Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A ADD-A-PAK FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY IF(AV) VR Package Circuit 200 A 150 V ADD-A-PAK Two diodes common anode MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. BENEFITS • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate • High surge capability • Easy mounting on heatsink ELECTRICAL DESCRIPTION The VS-VSKJS209.. Schottky rectifier common anode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature.  Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM Rectangular waveform tp = 5 μs sine VF 100 Apk, TJ = 125 °C TJ Range VALUES 200 150 11 300 0.85 -55 to 175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-VSKJS209/150 150 UNITS V Revision: 19-Mar-14 1 Document Number: 93232 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-VSKJS209/150 Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current per module per leg IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy Repetitive avalanche current EAS IAR TEST CONDITIONS 50 % duty cycle at TC = 113 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 1.8 A, L = 10 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical VALUES 200 100 11 300 1600 15 1 UNITS A mJ A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Maximum reverse leakage current Maximum junction capacitance Typical series inductance Maximum voltage rate of change IRM CT LS dV/dt TEST CONDITIONS 100 A 200 A TJ = 25 °C 100 A 200 A TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR Maximum RMS insulation voltage VINS 50 Hz VALUES UNITS 1.01 1.35 V 0.85 1.13 6 mA 85 3000 pF 7.0 nH 10 000 V/μs 3000 (1 min) 3600 (1 s) V THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage  temperature range Maximum thermal resistance,  junction to case per leg Typical thermal resistance,  case to heatsink per module TJ, TStg RthJC DC operation RthCS -55 to 175 °C 0.52 °C/W 0.1 Approximate weight 75 g 2.7 oz. Mounting torque ± 10 % to heatsink busbar A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 4 3 Nm Case style JEDEC® TO-240AA compatible Revision: 19-Mar-14 2 Document Number: 93232 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) www.vishay.com 1000 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 0 0.5 1.0 1.5 2.0 2.5 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 10 000 IR - Reverse Current (mA) VS-VSKJS209/150 Vishay Semiconductors 1000 100 TJ = 175 °C 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 0 10 20 30 40 50 60 70 80 90 100 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 TJ = 25 °C CT - Junction Capacitance (pF) ZthJC - Thermal Impedance (°C/W) 100 0 30 60 90 120 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 D = 0.75 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.20 DC 0.01 0.00001 0.00.


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