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VS-VSKJS209/150
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A
ADD-A-PAK
FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IF(AV) VR Package Circuit
200 A 150 V ADD-A-PAK Two diodes common anode
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces.
BENEFITS • Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION The VS-VSKJS209.. Schottky rectifier common anode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM
Rectangular waveform tp = 5 μs sine
VF 100 Apk, TJ = 125 °C
TJ Range
VALUES 200 150
11 300 0.85
-55 to 175
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL VR
VRWM
VS-VSKJS209/150 150
UNITS V
Revision: 19-Mar-14
1 Document Number: 93232
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-VSKJS209/150
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
per module per leg
IF(AV)
Maximum peak one cycle non-repetitive surge current
IFSM
Non-repetitive avalanche energy Repetitive avalanche current
EAS IAR
TEST CONDITIONS
50 % duty cycle at TC = 113 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse
Following any rated load condition and with rated VRRM applied
TJ = 25 °C, IAS = 1.8 A, L = 10 mH
Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES 200 100
11 300
1600 15
1
UNITS
A
mJ A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Maximum reverse leakage current
Maximum junction capacitance Typical series inductance Maximum voltage rate of change
IRM
CT LS dV/dt
TEST CONDITIONS
100 A 200 A
TJ = 25 °C
100 A 200 A
TJ = 125 °C
TJ = 25 °C TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
Maximum RMS insulation voltage
VINS
50 Hz
VALUES UNITS
1.01
1.35 V
0.85
1.13
6 mA
85
3000
pF
7.0 nH
10 000
V/μs
3000 (1 min) 3600 (1 s)
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case per leg Typical thermal resistance, case to heatsink per module
TJ, TStg
RthJC
DC operation
RthCS
-55 to 175 °C
0.52 °C/W
0.1
Approximate weight
75 g 2.7 oz.
Mounting torque ± 10 %
to heatsink busbar
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound.
4 3
Nm
Case style
JEDEC®
TO-240AA compatible
Revision: 19-Mar-14
2 Document Number: 93232
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IF - Instantaneous Forward Current (A)
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1000
100 TJ = 175 °C TJ = 125 °C TJ = 25 °C
10
1 0 0.5 1.0 1.5 2.0 2.5 VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 000
IR - Reverse Current (mA)
VS-VSKJS209/150
Vishay Semiconductors
1000 100
TJ = 175 °C
10 TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001 0 10 20 30 40 50 60 70 80 90 100
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
TJ = 25 °C
CT - Junction Capacitance (pF)
ZthJC - Thermal Impedance (°C/W)
100 0
30 60 90 120
VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
D = 0.75 0.1 D = 0.50
D = 0.33 D = 0.25 D = 0.20 DC
0.01 0.00001
0.00.