MMBT8550D

MMBT8550C / MMBT8550D PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050C and MMBT8050D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (T a = 25 OC) Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCEO -VCBO -VEBO -IC Ptot Tj TS Value 25 40 6 600 200 150 -55 to +150 Unit V V V mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru ® MMBT8550C / MMBT8550D Characteristics at Tamb=25 OC DC Current Gain at -VCE=1V, -IC=100mA MMBT8550C MMBT8550D at -VCE=1V, -IC=500mA Collector Cutoff Current at -VCB=35V Collector Saturation Voltage at -IC=500mA, -IB=50mA Base Saturation Voltage at -IC=500mA, -IB=50mA Collector Emitter Breakdown Voltage at -IC=2mA Collector Base Breakdown Voltage at -IC=10µA Emitter Base Breakdown Voltage at -IE=100µA Gain Bandwidth Product at -VCE=5V, -IC=10mA, f=50MHz Collector Base Capacitance at -VCB=10V, f=1MHz Thermal Resistance Junction to Ambient Symbol hFE hFE hFE -ICBO -VCE(sat) -VBE(sat) -V(BR)CEO -V(BR)CBO -V(BR)EBO fT CCBO RthA Min. 100 160 40 - - - 25 40 6 - - Typ. - - - - - - - 100 12 - Max. 250 400 - 100 0.5 1.2 - - - - 200 Unit - nA V V V V V MHz pF K/W SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stoc...