SVD730F

SVD730D/F/T_Datasheet 5.5A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD730D/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 5.5A,400V,RDS(on)（typ）=0.9Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING INFORMATION Part No. SVD730T SVD730F SVD730D SVD730DTR Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD730T SVD730F SVD730D SVD730D Material Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tape & Reel ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(TC=25°C, TO-220) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD EAS TJ Tstg SVD730D 77 0.62 Ratings SVD730F 400 ±30 5.5 33 0.26 313 -55～+150 -55～+150 SVD730T 100 0.8 Unit V V A W W/°C mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2010.12.10 Page 1 of 8 SVD730D/F/T_Datasheet THERMAL CHARAC...