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SFR08S60F2

Silan Microelectronics

600V SUPER-FAST RECOVERY RECTIFIER

SFR08S60T2/F2/D_Datasheet 8A, 600V SUPER-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR08S60T2/F2/D is a Super-Fast Rec...


Silan Microelectronics

SFR08S60F2

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Description
SFR08S60T2/F2/D_Datasheet 8A, 600V SUPER-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR08S60T2/F2/D is a Super-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Accuracy epitaxial dope control, advanced planar junction terminal structure and the platinum doped life control, guarantee the best overall performance, ruggedness and reliability characteristics. SFR08S60T2/F2 is intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-wheeling diode in low voltage inverters and chopper motor drivers. FEATURES ∗ Ultrafast 35 Nanosecond Recovery Time ∗ Low Forward Voltage Drop ∗ Low Leakage Current ∗ 150°C Operating Junction Temperature NOMENCLATURE ORDERING INFORMATION Part No. SFR08S60T2 SFR08S60F2 SFR08S60D SFR08S60DTR Package Type TO-220-2L TO-220F-2L TO-252-2L TO-252-2L Marking SFR08S60T2 SFR08S60F2 SFR08S60D SFR08S60D Material Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.4 2011.06.08 Page 1 of 6 SFR08S60T2/F2/D_Datasheet ABSOLUTE MAXIMUM RATINGS characteristics Peak Repetitive Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current Operation Junction Temperature Range Storage Temperature Range Symbol VRRM IF(AV) IFSM TJ Tstg THERMAL CHARACTERIST...




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