FS4UM-12

FS4UM-12 MITSUBISHI Nch POWER MOSFET FS4UM-12 HIGH-SPEED SWITCHING USE OUTLINE DRAWING 10.5MAX. r Dimensions in mm 4.5 1.3 7.0 4.5MAX. 16 3.2 12.5MIN. 3.8MAX. 2.54 φ 3.6 1.0 0.8 2.54 0.5 2.6 qwe wr ¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) ................................................................ 2.6Ω ¡ID ............................................................................................ 4A q GATE q w DRAIN e SOURCE r DRAIN e TO-220 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS (Tc = 25°C) Symbol VDSS VGSS ID IDM PD Tch Tstg — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Typical value Conditions Ratings 600 ±30 4 12 90 –55 ~ +150 –55 ~ +150 2.0 Unit V V A A W °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS4UM-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter Test conditions V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward...