PA502FMG

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor PA502FMG SOT-23 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -20 150m ID -3A D G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% 1 :GATE 2 :DRAIN 3 :SOURCE LIMITS -20 ±12 -3 -1.4 -10 1.25 0.8 -55 to 150 MAXIMUM 166 UNITS V V A W °C UNITS °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) STATIC VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±12V VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -4.5V VGS = -4.5V, ID =-2A VGS = -2.5V, ID = -1A LIMITS UNIT MIN TYP MAX -20 -0.5 -0.9 -1.2 V ±100 nA -1 µA -10 -6 A 100 150 m 180 250 Nov-03-2004 1 NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor PA502FMG SOT-23 Lead-Free Forward Transc...