DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PSS9013 series 20 V NPN general purpose transistors
Product sp...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PSS9013 series 20 V
NPN general purpose
transistors
Product specification Supersedes data of 2003 May 15
2004 Aug 10
Philips Semiconductors
20 V
NPN general purpose
transistors
Product specification
PSS9013 series
FEATURES
High power dissipation: 710 mW Low collector capacitance Low collector-emitter saturation voltage High current capability.
APPLICATIONS General purpose switching and amplification.
DESCRIPTION
NPN general purpose
transistor in a SOT54 (TO-92) leaded plastic package.
PNP complement: PSS9012 series.
MARKING
TYPE NUMBER PSS9013G PSS9013H
MARKING CODE S9013G S9013H
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO IC ICM
collector-emitter voltage collector current (DC) peak collector current
MAX. UNIT 20 V 500 mA 1A
PINNING
PIN 1 2 3
collector base emitter
DESCRIPTION
handbook, halfpage1 2 3
1 2
MAM279
3
Fig.1 Simplified outline (SOT54; TO-92) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
CONDITIONS open emitter open base open collector
Tamb ≤ 25 °C; note 1
MIN.
− − − − − − − −65 − −65
MAX.
40 20 5 500 1 100 710 +150 150 +150
Note 1. Device mounte...