N-Channel Silicon MOSFET
Ordering number : EN8603
2SK2405
SANYO Semiconductors
DATA SHEET
2SK2405
Features
• Built-in FRD. • 10V drive.
N-Cha...
Description
Ordering number : EN8603
2SK2405
SANYO Semiconductors
DATA SHEET
2SK2405
Features
Built-in FRD. 10V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature
Symbol VDSS VGSS ID IDP
PD
Tch Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Symbol
V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on) Ciss Coss Crss
Conditions
ID=1mA, VGS=0V VDS=450V, VGS=0V VGS= ±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz
Ratings 450 ±30 10 40 1.65 70 150
--55 to +150
Unit V V A A W W °C °C
min 450
2.0 3
Ratings typ
max
Unit
V
1.0 mA
±100 nA
3.0 V
6S
0.55
0.75 Ω
1500
pF
220 pF
75 pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein sh...
Similar Datasheet